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| jmnic product specification silicon npn power transistors 2sc5280 description ? with to-3p(h)is package ? high voltage ? low saturation voltage ? high speed ? bult-in damper diode applications ? high speed switching applications ? horizontal deflection output for medium resolution display,color tv pinning pin description 1 base 2 collector 3 emitter maximum absolute ratings(tc=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 600 v v ebo emitter-base voltage open collector 5 v i c collector current 8 a i cm collector current-peak 16 a i b base current 4 a p c collector power dissipation t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3p(h)is) and symbol
jmnic product specification 2 silicon npn power transistors 2sc5280 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =6a;i b =1.5 a 5 v v besat base-emitter saturation voltage i c =6a;i b =1.5 a 1.0 1.5 v v (br)ebo emitter-base breakdown voltage i e =400ma;i c =0 5 v i ebo emitter cut-off current v eb =5v; i c =0 72 250 ma i cbo collector cut-off current v cb =1500v; i e =0 1 ma h fe-1 dc current gain i c =1 a ; v ce =5v 10 35 h fe-2 dc current gain i c =6a ; v ce =5v 4 8.5 f t transition frequency i e =0.1a ; v ce =10v 2 mhz c ob collector output capacitance i e =0 ; v cb =10v;f=1mhz 115 pf v f diode forward voltage i f =6a 1.4 1.8 v switching times t stg storage time 4 6 | s t f fall time i cp =6a;i b1(end) =1.2a f h =31.5khz 0.2 0.5 | s jmnic product specification 3 silicon npn power transistors 2sc5280 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.20 mm) jmnic product specification 4 silicon npn power transistors 2sc5280 |
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